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r1111n series low noise 150ma ldo regulator no.ea-057-120206 1 outline the r1111n series are cmos-based voltage regulator ics with high output voltage accuracy, extremely low supply current, low on-resistance, and high ripple rejection. each of these voltage regulator ics consists of a voltage reference unit, an error amplifier, resistor s, a current limit circuit, and a chip enable circuit. these ics perform with low dropout voltage and a chip enable function. the line transient response and load transient response of the r1111n series are excellent, t hus these ics are very suitable for the power supply for hand-held communication equipment. the output voltage of these ics is fixed with high accuracy. since the package for these ics is sot-23-5 (mini-mold) package , high density mounting of the ics on boards is possible. features ? supply current ............................................................ typ. 35 a ? standby mode ............................................................. typ. 0.1 a ? dropout voltage .......................................................... typ. 0.2v (i out = 100ma) ? ripple rejectio n.......................................................... typ. 70db(f = 1khz) ? output voltage ............................................................ 1.5v to 5.0v (0.1v steps) ( for other voltages, please refer to mark informations.) ? output voltage accuracy............................................. 2.0% ? low temperature-drift coefficient of output voltage.. typ. 100ppm/c ? line regulat ion ........................................................... typ. 0.05%/v ? package .................................................................... sot-23-5 ? built-in chip enable circuit ( 2 types; a: active ?l?, b: active ?h?) ? built-in fold back protecti on circuit .......................... typ. 50ma (current at short mode) ? pin-out......................................................................... si milar to the lp2980 applications ? power source for cellular phones such as gsm, cdma and various kinds of pcss. ? power source for electrical appliances such as cameras, vcrs and camcorders. ? power source for battery-powered equipment.
r1111n 2 block diagram r1111nxx1a r1111nxx1b vref current limit v dd 15 2 3 v out gnd ce vref current limit v dd 15 2 3 v out gnd ce selection guide the output voltage, the active type for the ic s can be selected at the user's request. product name package quantity per reel pb free halogen free r1111nxx1 ? -tr-fe sot-23-5 3,000 pcs yes yes xx : the output voltage can be designated in the rang e from 1.5v(15) to 5.0v(50) in 0.1v steps. (for other voltages, please refer to mark informations.) ? : designation of active type (a) "l" active (b) "h" active
r1111n 3 pin configuration ? sot-23-5 1 4 5 23 (mark side) pin description ? sot-23-5 pin no symbol pin description 1 v dd input pin 2 gnd ground pin 3 ce or ce chip enable pin 4 nc no connection 5 v out output pin absolute maximum ratings symbol item rating unit v in input voltage 9.0 v v ce input voltage ( ce or ce pin) -0.3 ~ v in +0.3 v v out output voltage -0.3 ~ v in +0.3 v i out output current 200 ma p d power dissipation ? 420 mw t opt operating temperature range -40 ~ 85 c t stg storage temperature range -55 ~ 125 c ? ) for power dissipation, please refer to package information. absolute maximum ratings electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both devic e and system using the device in the field. the functional operation at or over these absolute maximum ratings is not assured.
r1111n 4 electrical characteristics r1111nxx1a ( topt=25 q c ) symbol item conditions min. typ. max. unit v out output voltage v in =v + set 1v, 1ma i out 30ma u 0.98 u 1.02 v i out output current refer to electrical characteristics by output voltage. 'v out / 'i out load regulation v in =v + set 1v, 1ma i out 80ma 12 40 mv v dif dropout voltage refer to electrical characteristics by output voltage. i ss supply current v in =v + set 1v, i out =0a 35 70 p a istandby standby current v in =v ce , v in =v + set 1v 0.1 1.0 p a 'v out / 'v in line regulation v set +0.5v v in 8.0v, i out = 30ma 0.05 0.20 %/v rr ripple rejection f=1khz, ripple 0.5vp-p, v in =v + set 1v 70 db v in input voltage 2.0 8.0 v 'v out / 'topt output voltage temperature coefficient i out =10ma, 40 q c topt 85 q c r 100 ppm / q c i sc short current limit v out = 0v 50 ma r pu ce pull-up resistance 2.5 5.0 10.0 m : v ceh ce input voltage ?h? 1.5 v in v v cel ce input voltage ?l? 0 0.25 v en output noise bw=10hz to 100khz 30 p vrms recommended operating conditions (electrical characteristics) all of electronic equipment should be designed that the mounted semico nductor devices operate within the recommended operating conditions. the semiconductor devic es cannot operate normally over the recommended operating conditions, even if when they are used over such c onditions by momentary electr onic noise or surge. and the semiconductor devices may receive serious damage when th ey continue to operate over the recommended operating conditions.
r1111n 5 r1111nxx1b ( topt=25c ) symbol item conditions min. typ. max. unit v out output voltage v in =v + set 1v, 1ma? i out ? 30ma 0.98 1.02 v i out output current refer to electrical characteristics by output voltage. v out / i out load regulation v in =v + set 1v, 1ma ? i out ? 80ma 12 40 mv v dif dropout voltage refer to electrical characteristics by output voltage. i ss supply current v in =v + set 1v, i out = 0a 35 70 a istandby standby current v in =v + set 1v, v ce =gnd 0.1 1.0 a v out / v in line regulation v set +0.5v ? v in ? 8.0v, i out = 30ma 0.05 0.20 %/v rr ripple rejection f=1khz, ripple 0.5vp-p, v in =v + set 1v 70 db v in input voltage 2.0 8.0 v v out / topt output voltage temperature coefficient i out = 10ma, ? 40 c ? topt ? 85 c 100 ppm / c i sc short current limit v out = 0v 50 ma r pd ce pull-up resistance 2.5 5.0 10.0 m v ceh ce input voltage ?h? 1.5 v in v v cel ce input voltage ?l? 0 0.25 v en output noise bw=10hz to 100khz 30 vrms recommended operating conditions (electrical characteristics) all of electronic equipment should be designed that the mounted semico nductor devices operate within the recommended operating conditions. the semiconductor devic es cannot operate normally over the recommended operating conditions, even if when they are used over such c onditions by momentary electr onic noise or surge. and the semiconductor devices may receive serious damage when th ey continue to operate over the recommended operating conditions.
r1111n 6 electrical characteristics by output voltage topt = 25c output current i out (ma) output voltage v out (v) condition min. 1.5 v set 1.7 100 1.8 v set 5.0 v in =v + set 1v 150 topt = 25c dropout voltage v dif (v) output voltage v out (v) condition min. typ. max. 1.5 0.5 1.6 0.4 1.7 0.3 1.8 v set 1.9 0.60 1.40 2.0 v set 2.4 0.35 0.70 2.5 v set 2.7 0.24 0.35 2.8 v set 3.3 0.20 0.30 3.4 v set 5.0 i out = 100ma 0.17 0.26 operation r1111nxx1a r1111nxx1b v dd 15 2 3 v out gnd r2 r1 ce current limit vref v dd 15 2 3 v out gnd r2 r1 ce current limit vref in these ics, fluctuation of output voltage, v out is detected by feed-back registers r1, r2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. a current limit ircuit for protection at short mode and a chip enable circuit, are included. c
r1111n 7 test circuits r1111nxx1b series v dd 5 1 2 3 v out i out in out gnd ce 0.1f 2.2f r1111nxx1b series v dd 5 1 2 3 v out i ss in out gnd ce 0.1f 2.2f fig.1 standard test circuit fig.2 supply current test circuit r1111nxx1b series v dd 5 1 p. g 2 3 v out i out in out gnd ce r1111nxx1b series v dd 5 1 2 3 v out in out gnd i1 i2 ce 1f fig.3 ripple rejection, line transient fig.4 load transient response test circuit response test circuit
r1111n 8 typical characteristics 1) output voltage vs. output current r1111n181b r1111n301b 2.0 1.8 1.6 1.0 0.8 0.6 0.4 0.2 1.4 1.2 0.0 output current i out (ma) 0 200 300 400 500 100 output voltage v out (v) 3.8v 2.8v 2.3v v in = 2.1v topt = 25 c 3.5 2.5 1.5 1.0 0.5 2.0 3.0 0.0 output current i out (ma) 0 200 300 400 500 100 output voltage v out (v) 5.0v 4.0v 3.5v v in = 3.3v topt = 25 c r1111n401b r1111n501b 5.0 4.5 4.0 2.5 2.0 1.5 1.0 0.5 3.5 3.0 0.0 output current i out (ma) 0 200 300 400 500 100 output voltage v out (v) 6.0v 5.0v 4.5v v in = 4.3v topt = 25 c 6.0 5.0 3.0 2.0 1.0 4.0 0.0 output current i out (ma) 0 200 300 400 500 100 output voltage (v) 7.0v 6.0v 5.5v v in = 5.3v topt = 25 c 2) output voltage vs. input voltage r1111n181b r1111n301b 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.2 1.3 input voltage v in (v) 1.0 4.0 5.0 6.0 7.0 8.0 2.0 3.0 output voltage v out (v) i out = 1ma 30ma 50ma topt = 25 c 3.1 3.0 2.9 2.8 2.7 2.5 2.6 input voltage v in (v) 2.0 4.0 5.0 6.0 7.0 8.0 3.0 output voltage v out (v) topt = 25 c 30ma 50ma i out =1ma
r1111n 9 r1111n401b r1111n501b 4.5 4.0 3.5 3.0 2.5 intput voltage v in (v) 2.0 4.0 5.0 6.0 8.0 7.0 3.0 output voltage v out (v) i out = 1ma 30ma 50ma topt = 25 c 5.5 5.0 4.0 3.5 3.0 4.5 2.5 intput voltage v in (v) 2.0 4.0 5.0 6.0 8.0 7.0 3.0 output voltage v out (v) i out = 1ma 30ma 50ma topt = 25 c 3) dropout voltage vs. output current r1111n181b r1111n301b 1.20 1.00 0.80 0.60 0.40 0.20 0.00 output current i out (ma) 0 50 100 150 dropout voltage v dif (v) topt = 85 c 25c -40c 0.40 0.35 0.30 0.20 0.15 0.10 0.05 0.25 0.00 output current i out (ma) 0 50 100 150 dropout voltage v dif (v) topt = 85 c 25c -40c r1111n401b r1111n501b 0.40 0.35 0.30 0.25 0.20 0.15 0.00 0.05 0.10 output current i out (ma) 0 50 100 150 dropout voltage v dif (v) topt = 85 c 25c -40c 0.40 0.35 0.30 0.25 0.20 0.15 0.00 0.05 0.10 output current i out (ma) 0 50 100 150 dropout voltage v dif (v) topt = 85 c 25c -40c
r1111n 10 4) output voltage vs. temperature r1111n181b r1111n301b 1.90 1.88 1.86 1.80 1.78 1.76 1.74 1.72 1.84 1.82 1.70 temperature topt ( c) -50 0 25 50 100 75 -25 output voltage v out (v) v in = 2.8v i out = 30ma 3.10 3.08 3.06 3.00 2.98 2.96 2.94 2.92 3.04 3.02 2.90 temperature topt ( c) -50 0 25 50 10 0 75 -25 output voltage v out (v) i out = 30ma v in = 4.0v r1111n401b r1111n501b 4.10 4.08 4.06 4.00 3.98 3.96 3.94 3.92 4.04 4.02 3.90 temperature topt ( c) -50 0 25 50 10 0 75 -25 output voltage v out (v) i out = 30ma v in = 5.0v 5.10 5.08 5.06 5.00 4.98 4.96 4.94 4.92 5.04 5.02 4.90 temperature topt ( c) -50 0 25 50 10 0 75 -25 output voltage v out (v) i out = 30ma v in = 6.0v 5) supply current vs. input voltage r1111n181b r1111n301b 60 50 40 30 20 0 10 input voltage v in (v) 1.0 2.0 4.0 5.0 6.0 7.0 8. 0 3.0 supply current i i ss (a) topt = 25 c 60 50 40 30 20 0 10 input voltage v in (v) 1.0 2.0 4.0 5.0 6.0 7.0 8.0 3.0 supply current i i ss (a) topt = 25 c
r1111n 11 r1111n401b r1111n501b 60 50 40 30 20 10 0 intput voltage v in (v) 1.0 4.0 5.0 6.0 7.0 8. 0 2.0 3.0 supply current i ss (a) topt = 25 c 60 50 40 30 20 10 0 intput voltage v in (v) 1.0 4.0 5.0 6.0 7.0 8.0 2.0 3.0 supply current i ss (a) topt = 25 c 6) supply current vs. temperature r1111n181b r1111n301b 50 45 40 35 30 20 25 temperature topt ( c) -50 50 100 0 supply current i ss (a) v in = 2.8v 50 45 40 35 30 20 25 temperature topt ( c) -50 50 100 0 supply current i ss (a) v in = 2.8v r1111n401b r1111n501b 50 45 40 35 30 20 25 temperature topt ( c) -50 50 100 0 supply current i ss (a) v in = 5.0v 50 45 40 35 30 20 25 temperature topt ( c) -50 50 100 0 supply current i ss (a) v in = 6.0v
r1111n 12 7) dropout voltage vs. set output voltage r1111nxx1b 0.8 0.9 1.0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.0 2.0 3.0 4.0 5.0 i out = 150ma i out = 100ma i out = 50ma i out = 30ma i out = 10ma set output voltage vreg (v) dropout voltage v dif (v) topt = 25 8) ripple rejection vs. frequency r1111n181b r1111n181b 80 70 60 50 40 30 20 10 0 0.1 1 10 100 i out = 1ma i out = 30ma i out = 50ma frequuency f (khz) ripple rejection rr (db) v in = 2.8v dc + 0.5vp-p c out = tantal 1.0f 80 70 60 50 40 30 20 10 0 0.1 1 10 100 i out = 1ma i out = 30ma i out = 50ma frequuency f (khz) ripple rejection rr (db) v in = 2.8v dc + 0.5vp-p c out = tantal 2.2f r1111n301b r1111n301b 80 70 60 50 40 30 20 10 0 0.1 1 10 100 i out = 1ma i out = 30ma i out = 50ma frequuency f (khz) ripple rejection rr (db) v in = 4v dc + 0.5vp-p c out = tantal 1.0f 80 70 60 50 40 30 20 10 0 0.1 1 10 100 i out = 1ma i out = 30ma i out = 50ma frequuency f (khz) ripple rejection rr (db) v in = 4v dc + 0.5vp-p c out = tantal 2.2f
r1111n 13 r1111n401b r1111n401b 80 70 60 50 40 30 20 10 0 0.1 1 10 100 i out = 1ma i out = 30ma i out = 50ma frequeney f (khz) ripple rejection rr (db) v in = 5.0v dc + 0.5vp-p c out = tantal 1.0f 80 70 60 50 40 30 20 10 0 0.1 1 10 100 i out = 1ma i out = 30ma i out = 50ma frequeney f (khz) ripple rejection rr (db) v in = 5.0v dc + 0.5vp-p c out = tantal 2.2f 9) ripple rejection vs. input voltage (dc bias) r1111n301b r1111n301b 80 70 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 f = 400hz f = 1khz f = 10khz input voltage v in (v) ripple rejection rr (db) i out = 1ma c out = 2.2f 80 70 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 f = 400hz f = 1khz f = 10khz input voltage v in (v) i out = 10ma c out = 2.2f ripple rejection rr(db) r1111n301b 80 70 60 50 40 30 20 10 0 f = 400hz f = 1khz f = 10khz i out = 50ma c out = 2.2f 3.1 3.2 3.3 3.4 3.5 input voltage v in (v) ripple rejection rr(db)
r1111n 14 10) input transient response r1111n301b i out =30ma tr=tf=5 s c out =tantalum 1.0 f 2.8 2.9 3.0 3.1 3.2 3.3 3.4 time t (s) output voltage v out (v) input voltage v in (v) 0 20 40 60 80 100 120 0 1 6 5 4 3 2 input voltage output voltage r1111n301b i out =30ma tr=tf=5 s c out =tantalum 2.2 f 2.8 2.9 3.0 3.1 3.2 3.3 3.4 0 20 40 60 80 100 120 0 1 6 5 4 3 2 output voltage v out (v) input voltage v in (v) time t (s) input voltage output voltage r1111n301b i out =30ma tr=tf=5
r1111n 15 11) load transient response r1111n301b v in =4v c in =tantalum 1 f c out =tantalum 1.0 f 2.8 2.9 3.0 3.1 3.2 3.3 3.4 time t (s) output voltage v out (v) output current i out (ma) 02468 10 12 14 16 18 20 -150 -100 150 100 50 0 -50 output current output voltage r1111n301b v in =4v c in =tantalum 1 r1111n301b v in =4v c in =tantalum 1 f c out =tantalum 4.7 f 2.8 2.9 3.0 3.1 3.2 3.3 3.4 02468 10 12 14 16 18 20 -150 -100 150 100 50 0 -50 time t (s) output voltage v out (v) output current i out (ma) output current output voltage
r1111n 16 technical notes when using these ics, consider the following points: in these ics, phase compensation is made for securing st able operation even if the load current is varied. for this purpose, be sure to use a capacitor c out with good frequency characteristics and esr (equivalent series resistance) of which is in the range described as follows: v out i out v in v in ce gnd esr r1111n301b s.a. 3 1 2 5 ceramic capacitor 1f ceramic capacitor spectrum analyzer measuring circuit for white noise; r1111n301b the relationship between i out (output current) and esr of output capacitor is shown in the graphs below. the conditions when the white noise level is under 40mv (avg .) are indicated by the hatched area in the graph. (note: when the additional ceramic capacitors are connec ted to the output pin with output capacitor for phase compensation, the operation might be unstable. because of this, test these ics with as the same external components as the ones to be used on the pcb.) (1) v in = 4v (2) frequency band: 10hz to 1mhz (3) temperature: 25 c r1111n301b r1111n301b 100.0 10.0 1.0 0.1 0 100 50 150 output current i out (ma) esr () ceramic 1.0 f 100.0 10.0 1.0 0.1 output current i out (ma) 0 100 50 150 esr () ceramic 2.2 f
r1111n 17 make v dd and gnd lines sufficient. if their impedance is high, noise pick up or incorrect operation may result. connect the capacitor with a capacitance of 1 p f or more between v dd and gnd as close as possible. set external components, especially the output capacitor, as close as possible to the ics and make wiring as short as possible. typical application r1111nxx1a v out ou t in v dd gnd ce cap. cap. r1111nxx1b v out out in v dd gnd ce cap. cap.
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